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| 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600(Z) 1st. Edition February 1998 Features * Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) * Excellent cross modulation characteristics * Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is "YB-". 3SK318 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 6 6 20 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure I DS(op) |yfs| Ciss Coss Crss PG NF -- -- 0.5 0.5 0.5 18 1.3 0.9 -- 18 -- -- -- 0.7 0.7 4 24 1.6 1.2 0.019 21 1.4 100 100 1.0 1.0 10 32 1.9 1.5 0.03 -- 2.2 nA nA V V mA mS pF pF pF dB dB VDS = 3.5V, VG2S = 3V I D = 10mA , f = 900MHz VG1S = 5V, VG2S = VDS = 0 VG2S = 5V, VG1S = VDS = 0 VDS = 5V, VG2S = 3V I D = 100A VDS = 5V, VG1S = 3V I D = 100A VDS = 3.5V, VG1S = 1.1V VG2S = 3V VDS = 3.5V, VG2S = 3V I D = 10mA , f = 1kHz VDS = 3.5V, VG2S = 3V I D = 10mA , f= 1MHz V(BR)G2SS 6 -- -- V I G2 = 10A, VG1S = VDS = 0 V(BR)G1SS 6 -- -- V I G1 = 10A, VG2S = VDS = 0 Symbol Min V(BR)DSS 6 Typ -- Max -- Unit V Test Conditions I D = 200A, VG1S = VG2S = 0 2 3SK318 Maximum Channel Power Dissipation Curve Pch (mW) 200 I D (mA) 20 Typical Output Characteristics VG1S = 1.7 V V G2S = 3 V 16 1.6 V 1.5 V 150 Channel Power Dissipation 12 1.4 V 1.3 V 1.2 V 100 Drain Current 8 50 4 1.1 V 1.0 V 0.9 V 0.8 V 0 50 100 150 Ta (C) 200 0 Ambient Temperature 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current vs. Gate1 to Source Voltage 20 I D (mA) V DS = 3.5 V 20 2.5 V 2.0 V I D (mA) 16 Drain Current vs. Gate2 to Source Voltage V DS = 3.5 V 2.0 V 1.6 V 1.8 V 16 12 1.5 V 12 Drain Current 8 Drain Current 1.4 V 8 1.2 V VG1S = 1.0 V 4 VG2S = 1.0 V 0 1 2 3 Gate1 to Source Voltage 5 VG1S (V) 4 4 0 1 2 3 4 VG2S (V) 5 Gate2 to Source Voltage 3 3SK318 Forward Transfer Admittance vs. Gate1 Voltage V DS = 3.5 V V G2S = 3 V (dB) 20 Power Gain vs. Drain Current 25 Forward Transfer Admittance |y fs | (mS) 30 24 2.5 V 18 Power Gain PG 15 12 2V 1.5 V 1V 10 V DS = 3.5 V V G2S = 3 V f = 900 MHz 5 10 15 Drain Current I D 20 (mA) 25 6 5 0 0.4 0.8 1.2 1.6 2.0 0 Gate1 to Source Voltage VG1S (V) Noise Figure vs. Drain Current 5 (dB) Power Gain PG V DS = 3.5 V V G2S = 3 V f = 900 MHz (dB) 25 Power Gain vs. Drain to Source Voltage 4 20 Noise Figure NF 3 15 2 10 V G2S = 3 V I D = 10 mA f = 900 MHz 2 4 6 Drain to Source Voltage 8 10 VDS (V) 1 5 0 5 10 15 Drain Current I D 20 (mA) 25 0 4 3SK318 Noise Figure vs. Drain to Source Voltage 5 V G2S = 3 V I D = 10 mA f = 900 MHz 25 VDS = 3.5 V f = 900MHz Power Gain vs. Gate2 to Source Voltage Noise Figure NF (dB) Power Gain PG (dB) 4 20 3 15 2 10 1 5 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 5 Noise Figure vs. Gate2 to Source Voltage VDS = 3.5 V f = 900MHz Noise Figure NF (dB) 4 3 2 1 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 5 3SK318 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 1 / div. 60 -150 -30 Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 3.5 V , V G2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.002 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) 6 3SK318 Sparameter (VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1.000 0.998 0.997 0.994 0.994 0.986 0.978 0.972 0.969 0.954 0.955 0.941 0.932 0.924 0.919 0.905 0.896 0.884 0.880 0.866 ANG -2.8 -5.8 -9.1 -12.2 -15.1 -18.5 -21.3 -24.1 -27.0 -29.7 -32.8 -35.7 -38.3 -41.3 -44.1 -46.9 -49.2 -52.4 -54.7 -57.7 S21 MAG 2.41 2.41 2.39 2.38 2.37 2.35 2.30 2.28 2.26 2.23 2.19 2.17 2.14 2.09 2.07 2.03 2.00 1.96 1.93 1.89 ANG 176.3 171.9 167.6 163.7 159.8 155.5 151.4 147.6 143.6 140.0 135.9 132.2 128.6 125.0 121.5 117.9 114.7 110.4 107.1 103.8 S12 MAG 0.00068 0.00176 0.00223 0.00303 0.00365 0.00414 0.00484 0.00533 0.00588 0.00617 0.00666 0.00672 0.00694 0.00709 0.00689 0.00699 0.00644 0.00633 0.00585 0.00605 ANG 89.1 88.5 80.7 76.6 79.1 75.4 75.0 78.0 71.6 69.5 71.5 70.6 69.0 71.4 69.0 68.9 74.2 75.5 77.8 82.1 S22 MAG 0.999 0.996 0.996 0.994 0.991 0.988 0.983 0.980 0.976 0.971 0.966 0.960 0.955 0.948 0.942 0.937 0.930 0.923 0.917 0.910 ANG -2.2 -4.5 -6.7 -8.7 -11.0 -13.2 -15.3 -17.4 -19.6 -21.7 -23.7 -25.6 -27.8 -29.9 -31.8 -33.8 -35.8 -37.6 -39.8 -41.9 7 3SK318 Package Dimensions Unit: mm 2.0 0.2 1.3 0.65 0.65 0.3 - 0.05 + 0.1 0.425 0.3 - 0.05 + 0.1 0.16 - 0.06 + 0.1 3 2 2.1 0.3 1.25 0 to 0.1 4 0.3 - 0.05 0.65 + 0.1 1 0.6 0.425 0.9 0.1 0.4 - 0.05 + 0.1 1.25 0.2 Hitachi Code CMPAK-4 SC-82AB EIAJ -- JEDEC 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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